MOCVD of A1N on Silicon
- 16 January 1982
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 69 (1), K3-K6
- https://doi.org/10.1002/pssa.2210690146
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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- Acoustic surface wave properties of epitaxially grown aluminum nitride and gallium nitride on sapphireApplied Physics Letters, 1973
- Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinelJournal of Electronic Materials, 1973
- The Use of Metalorganics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1971