AlF3—A new very high resolution electron beam resist

Abstract

Using dose resolved energy loss and energy filtered imaging, the mechanism of a new high resolution resist, AlF₃, is examined. It is found that exposure induces mass loss including the displacement of Al ions. From the energy filtered images, it is observed that the Al coats the walls of the exposed area. Further, it is demonstrated that high resolution patterns exposed in AlF₃ can be replicated into Si₃N₄ substrates.