On the origin of photoluminescence in heavily-doped silicon
- 31 March 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 29 (11), 763-766
- https://doi.org/10.1016/0038-1098(79)90156-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Metal–insulator transitionsPhysics Today, 1978
- Photoluminescence in heavily-doped Si(P)Canadian Journal of Physics, 1978
- Impurity band states in SI(P)Solid State Communications, 1976
- Electron-hole droplets and impurity band states in heavily doped Si(P): Photoluminescence experiments and theoryPhysical Review B, 1976
- Electron–Hole Droplets in Semiconducting and Metallic SiliconCanadian Journal of Physics, 1974
- Radiative Spectra from Shallow Donor-Acceptor Electron Transfer in SiliconPhysical Review B, 1969
- Infrared Absorption in Heavily Doped n‐Type SiPhysica Status Solidi (b), 1969
- Radiative Recombination in Highly Doped GermaniumPhysica Status Solidi (b), 1969
- Optical Measurement of Compensation in Highly Doped SiliconPhysica Status Solidi (b), 1967
- Effects of Configuration Interaction on Intensities and Phase ShiftsPhysical Review B, 1961