Deep-Level Transient Spectroscopy of Interface States in ZnO/PrCoOx/ZnO Thin-Film Junctions
- 1 October 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (10A), L1429
- https://doi.org/10.1143/jjap.31.l1429
Abstract
Deep-level transient spectroscopy is successfully applied to detect interface states in ZnO/PrCoO x /ZnO thin-film junctions. The interface state is measured at 0.70 eV below the conduction-band edge. The junctions are equivalent to a model of a single grain boundary in a ceramic varistor.Keywords
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