Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer
- 1 February 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 257 (1), 110-115
- https://doi.org/10.1016/0040-6090(94)06377-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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