Surface passivation effects of As2S3 glass on self-aligned AlGaAs/GaAs heterojunction bipolar transistors
- 12 November 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (20), 2113-2115
- https://doi.org/10.1063/1.104114
Abstract
A recently developed As2S3 chemical treatment was used to passivate the perimeters of self‐aligned heterojunction bipolar transistors (HBTs). The As2S3 chemical treatment significantly lowered the base current resulting in a two order of magnitude reduction in the collector current density at which dc current gain was observed (β=1). No degradation with time has been observed in the electrical characteristics of the chemically treated HBTs. This absence of degradation is attributed to the impermeability to oxygen of the As2S3 glass which coats the perimeter of the HBT after chemical treatment.Keywords
This publication has 14 references indexed in Scilit:
- Surface recombination in GaAlAs/GaAs heterostructure bipolar transistorsJournal of Applied Physics, 1988
- Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1988
- Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAsApplied Physics Letters, 1988
- Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodesApplied Physics Letters, 1988
- Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowthApplied Physics Letters, 1988
- Nearly ideal electronic properties of sulfide coated GaAs surfacesApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1985
- Measurement of high boron concentrations in silicon by infrared spectroscopyApplied Physics Letters, 1985
- Current Gain Enhancement in Graded Base AlGaAs/GaAs HBTs Associated with Electron Drift MotionJapanese Journal of Applied Physics, 1985