Short wavelength (visible) GaAs quantum well lasers grown by molecular beam epitaxy

Abstract

GaAs-AlGaAs multiple quantum well (MQW) injection lasers with well widths from 55 to 13 Å have been grown by molecular beam epitaxy and operated at room temperature, showing emission at wavelengths down to 704 nm, the shortest reported for a MQW injection laser with GaAs wells. In a device with 25-Å wells some evidence of coupling was apparent when barrier widths were reduced to 40 Å. For devices with 80-Å barriers there is a difference of about 20 nm between the calculated n=1 (e–hh) transition wavelength and the lasing wavelength, whereas the calculation agrees with photovoltage absorption measurements on the same structures.