Epitaxial growth of InP on Si using MIBE technique
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4), 243-244
- https://doi.org/10.1016/0022-0248(87)90399-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Characterization of Lattice Defect Structures at GaAs/Si Interface by Transmission Electron MicroscopyJapanese Journal of Applied Physics, 1986
- A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion BeamJapanese Journal of Applied Physics, 1985
- Molecular beam epitaxy of GaAs using a mass-separated, low-energy As+ ion beamJournal of Vacuum Science & Technology B, 1985
- Molecular Beam Epitaxy of InP Using Low Energy P+ Ion BeamJapanese Journal of Applied Physics, 1985