Molecular Beam Epitaxy of InP Using Low Energy P+ Ion Beam

Abstract

A new film growth technique of III-V compound semiconductors is developed where the sticking coefficient of the group V element can be increased by implanting mass separated, high purity group V ion at low energy. Using this growth technique, the epitaxial growth of InP on (100)InP substrate is studied. Single crystal films are grown between 210°C and 420°C at the P⁺ ion energy of 200 eV and with the flux intensities of In molecular beam and P⁺ ion beam of 1.5×10¹³ cm^-2·s^-1 and 3.0×10¹³ cm^-2·s^-1, respectively. The films grown between 300°C and 420°C show sharp 2×4 structure in the RHEED pattern as in the case of MBE, and also show well defined features due to bound excitons and donor-acceptor pairs in the photoluminescence spectra at 4.2 K.