Plasma anodization as a dry low temperature technique for oxide film growth on silicon substrates
- 1 June 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 92 (1-2), 19-32
- https://doi.org/10.1016/0040-6090(82)90184-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Morphology of SiSiO2 interfaceSurface Science, 1980
- Anodization of Silicon in RF Induced Oxygen PlasmaJapanese Journal of Applied Physics, 1980
- Selective Oxidation of Silicon in High Pressure SteamJournal of the Electrochemical Society, 1978
- Defect Formation during High Pressure, Low Temperature Steam Oxidation of SiliconJournal of the Electrochemical Society, 1978
- Breakdown in silicon oxide−A reviewJournal of Vacuum Science and Technology, 1977
- Defects in silicon substratesJournal of Vacuum Science and Technology, 1977
- Topology of Silicon Structures with Recessed SiO2Journal of the Electrochemical Society, 1976
- The Anodization of Si in an RF PlasmaJournal of the Electrochemical Society, 1973
- Silicon Oxide Films Grown in a Microwave DischargeJournal of Applied Physics, 1967
- Silicon Oxidation in an Oxygen Plasma Excited by MicrowavesJournal of Applied Physics, 1965