Molecular and ion beam epitaxy of 3C-SiC
- 15 August 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4), 380-382
- https://doi.org/10.1063/1.95227
Abstract
SiC films were grown on (100) silicon substrates using a Si molecular beam and a C+ ion beam with the same impingement rates of Si atoms and C+ ions. Reflection high‐energy electron diffraction analysis showed that 3C‐SiC grows epitaxially on the Si substrate at temperatures ranging from 820 to 1000 °C and at the ion energies of 50 and 100 eV with the ion current density of about 3 μA/cm2. Auger electron spectroscopy measurements showed that the films obtained were stoichiometric and do not contain impurities such as oxygen. The influence of surface treatments of Si substrates was also studied.Keywords
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