Germanium and silicon ion beam deposition
- 1 June 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 92 (1-2), 123-129
- https://doi.org/10.1016/0040-6090(82)90194-8
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Low-energy mass-separated ion beam deposition of materialsNuclear Instruments and Methods, 1981
- Ion cluster beam deposition of silver and germanium on siliconJournal of Crystal Growth, 1981
- Epitaxial synthesis of diamond by carbon-ion deposition at low energyNature, 1978
- Ionized-cluster beam deposition and epitaxy as fabrication techniques for electron devicesThin Solid Films, 1977
- Low Temperature Silicon Epitaxy by Partially Ionized Vapor DepositionJapanese Journal of Applied Physics, 1977
- Germanium and Silicon Film Growth by Low-Energy Ion Beam DepositionJapanese Journal of Applied Physics, 1977
- Thin film deposition using low-energy ion beams. I. System specification and designJournal of Vacuum Science and Technology, 1976
- The epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniquesJournal of Crystal Growth, 1971
- Epitaxial Growth of Ge Layers on Si Substrates by Vacuum EvaporationJapanese Journal of Applied Physics, 1968