Characterization and growth of SiC epilayers on Si substrates
- 31 December 1986
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 2 (3), 223-231
- https://doi.org/10.1016/0749-6036(86)90024-8
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Bonding information from Auger spectroscopyApplications of Surface Science, 1985
- Epitaxial Growth and Characterization of β ‐ SiC Thin FilmsJournal of the Electrochemical Society, 1985
- Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystalsJournal of Crystal Growth, 1984
- Epitaxial growth of β-SiC single crystals by successive two-step CVDJournal of Crystal Growth, 1984
- Metal-Oxide-Semiconductor Characteristics of Chemical Vapor Deposited Cubic-SiCJapanese Journal of Applied Physics, 1984
- Surface studies of epitaxial β-SiC on Si(100)Journal of Applied Physics, 1984
- Production of large-area single-crystal wafers of cubic SiC for semiconductor devicesApplied Physics Letters, 1983
- Auger and electron energy-loss study of the Al/SiC interfaceApplied Physics Letters, 1983
- Chemical Vapor Deposition of Single Crystalline β ‐ SiC Films on Silicon Substrate with Sputtered SiC Intermediate LayerJournal of the Electrochemical Society, 1980
- Thermal decomposition of nickel carbide: an Auger lineshape studyJournal of Vacuum Science and Technology, 1979