Oxidation mechanisms in TiSi2 films on single silicon substrates

Abstract

Ti is deposited on single silicon wafer and then forms TiSi₂ by thermal annealing in vacuum. In the steam oxidation, TiSi₂ first dissociates and forms a Ti compound and SiO₂. After the formation of Ti compound reaches the saturation level, the substrate Si rapidly diffuses through the TiSi₂ to form SiO₂, while the TiSi₂ remains inert. A two‐step oxidation process is thus described. The calculated activation energy of reaction is 46.2 kcal/mol, and that of diffusion is 32 kcal/mol.