Interstitial iron and thermal defects in silicon
- 16 May 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 53 (1), K71-K74
- https://doi.org/10.1002/pssa.2210530169
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Iron as a thermal defect in siliconApplied Physics Letters, 1978
- EPR of a thermally induced defect in siliconApplied Physics Letters, 1977
- The role of impurities in the formation of quenched-in recombination centres in thermally treated siliconPhysica Status Solidi (a), 1976
- Thermally induced defects in n-type and p-type siliconPhysica Status Solidi (a), 1973
- Defects in Quenched SiliconPhysica Status Solidi (b), 1969
- Quenched‐in Levels in p‐Type SiliconPhysica Status Solidi (b), 1967
- Iron-boron pairing in siliconJournal of Physics and Chemistry of Solids, 1962