Deep centers in a free-standing GaN layer
- 9 April 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (15), 2178-2180
- https://doi.org/10.1063/1.1361273
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Evolution of deep centers in GaN grown by hydride vapor phase epitaxyApplied Physics Letters, 2001
- Electrical, structural, and optical characterization of free-standing GaN template grown by hydride vapor phase epitaxySolid-State Electronics, 2000
- Electron beam and optical depth profiling of quasibulk GaNApplied Physics Letters, 2000
- Sputter deposition-induced electron traps in epitaxially grown n-GaNApplied Physics Letters, 1999
- Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced LiftoffJapanese Journal of Applied Physics, 1999
- Hydride Vapor Phase Epitaxial Growth of III–V NitridesPublished by Elsevier ,1999
- Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurementsApplied Physics Letters, 1997
- Schottky barrier properties of various metals on n-type GaNSemiconductor Science and Technology, 1996
- Schottky barriers on n-GaN grown on SiCJournal of Electronic Materials, 1996