Properties of Photosensor with Amorphous Si:H/SiOx:H Double-Layer Structure

Abstract

A new amorphous silicon photosensor with glass/Cr/a-Si:H/a-SiO _x :H/ITO structure was prepared. Initially, the photoresponse of this structure to a light pulse is about 750 times slower than that of the photosensor with the inverse (glass/ITO/a-SiO _x :H/a-Si:H/Cr) structure. The X-ray photoemission spectra show that the a-SiO _x :H surface is additionally oxidized during deposition of the ITO electrode. A fast response with a rise time of less than 1 ms can be obtained by treating the a-SiO _x :H surface with boron plasma or depositing the boron-doped a-SiO _x :H layer onto the undoped a-SiO _x :H layer before the ITO deposition.