Implications of the configuration-dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III-V molecular beam epitaxial growth and the dynamics of the reflection high-energy electron diffraction intensity

Abstract

The critical role of the group V pressure in controlling the dynamic growth front morphology during molecular beam epitaxial growth of III-V compounds is demonstrated via computer simulations based upon a configuration-dependent reactive incorporation growth process and experimentally confirmed via measurements of the dynamics of reflection high-energy electron diffraction during homoepitaxy of GaAs (100). Implications for growth conditions desirable for realizing high quality interfaces and high luminescence efficiency in systems such as GaAs/AlxGa1−xAs are discussed.