Temperature-dependent transition from two-dimensional to three-dimensional growth in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells
- 28 December 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (26), 3139-3141
- https://doi.org/10.1063/1.107986
Abstract
Transition from two‐dimensional to three‐dimensional growth mode has been investigated by photoluminescence in highly strained InxGa1−xAs/GaAs (0.36≤x≤1) single quantum wells. The structures were grown by molecular beam epitaxy from 410 to 590 °C. The critical layer thickness based on this transition decreased as the growth temperature increased. This behavior was well described by the single‐kink Matthews model [J. Vac. Sci. Technol. 12, 126 (1975)] including the simplest expression of the Peierls–Nabarro friction stress [J. Appl. Phys. 41, 3800 (1970)].Keywords
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