The Application of Berg-Barrett Skew Reflections for Observing Boron Diffusion-induced Imperfections in Silicon Wafers †
- 1 March 1966
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 20 (3), 273-288
- https://doi.org/10.1080/00207216608937866
Abstract
The geometry of Berg-Barrett skew reflections is analysed with particular reference to (III) Si surfaces, and 220 and 311 skew reflections are used to record large surface areas without scanning. Micrographs of B diffusion-induced. dislocations are presented to demonstrate the usefulness of skew reflections in varying the depth of penetration and the image contrast.Keywords
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