High field magneto-transport measurements in GaAs-GaAlAs multilayers
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3), 290-294
- https://doi.org/10.1016/0039-6028(82)90603-3
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilitiesElectronics Letters, 1981
- Electronic properties of a heavily-doped n-type GaAsGa1−xAlxAs superlatticeSurface Science, 1980
- Shubnikov-de Haas oscillations in n-channel silicon 〈100〉 MOSFETS in magnetic fields up to 35 TSolid State Communications, 1979
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979
- Electron mobilities in modulation-doped semiconductor heterojunction superlatticesApplied Physics Letters, 1978
- Analysis of ρxx minima in surface quantum oscillations on (100) n-type silicon inversion layersSurface Science, 1978
- Evidence for Anderson localisation in Landau level tails from the analysis of two-dimensional Shubnikov—de Haas conductivity minimaSolid State Communications, 1977
- Temperature dependence of the magnetoconductivity in the ground Landau level in silicon inversion layersSolid State Communications, 1977
- High field magnetoconductivity of Si inversion layersSolid State Communications, 1977
- Quantum Galvanomagnetic Effect inn-Channel Silicon Inversion Layers under Strong Magnetic FieldsProgress of Theoretical Physics Supplement, 1975