The growth of gallium arsenide onto single-crystal metallic substrates
- 1 May 1967
- journal article
- Published by Springer Nature in Journal of Materials Science
- Vol. 2 (3), 295-297
- https://doi.org/10.1007/bf00555389
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- The preparation of high purity gallium arsenide by vapour phase epitaxial growthSolid-State Electronics, 1965
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Vapor Deposition of Germanium on MolybdenumJournal of the Electrochemical Society, 1965
- A review of the growth and structure of thin films of germanium and siliconMicroelectronics Reliability, 1964
- Preparation of Crystalline Germanium Films on MetalsJournal of Applied Physics, 1963
- The Behaviour of Some Impurities in III-V CompoundsProceedings of the Physical Society, 1959