Investigation of various copper seed layers for copper electrodeposition applicable to ultralarge-scale integration interconnection
- 16 December 2002
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 21 (1), 33-38
- https://doi.org/10.1116/1.1529654
Abstract
As a superior substituent for the chemical-vapor deposition and physical-vapor deposition(PVD)Cu processes in an ultralarge-scale integrated interconnection,electrodeposition on two kinds of electroless-plated Cu seed layers was investigated. Co(II) and formaldehyde were used as reducing agents for each electroless plating. Two samples of electroless-plated seed layers had relatively higher resistivity due to rough and irregular grains and weakly developed (111) texture, which are peculiarities of electroless plating. However, the Cuelectrodeposited onto the electroless-plated seed showed reasonably good characteristics in resistivity,impurity level, crystalline structure, and surface roughness compared to those on the conventional PVDCu seed. For the gap filling in the damascene structure, the electroless seed layer plating using formaldehyde and the subsequent electrodeposition on a patterned wafer showed an excellent filling profile without any voids or keyholes. After 400 °C annealing in a N 2 atmosphere, adhesion between the Cu/barrier interfaces of electrodepositedcopper on the two electroless-plated seeds was highly improved.Keywords
This publication has 19 references indexed in Scilit:
- Chemical vapor deposition of an electroplating Cu seed layer using hexafluoroacetylacetonate Cu(1,5-dimethylcyclooctadiene)Journal of Vacuum Science & Technology A, 2001
- Electroless Copper Deposition for Ultralarge-Scale IntegrationJournal of the Electrochemical Society, 2001
- Stress in Copper Seed Layer Employing in the Copper InterconnectionElectrochemical and Solid-State Letters, 2001
- Copper Metallization for High Performance Silicon TechnologyAnnual Review of Materials Science, 2000
- Development of different copper seed layers with respect to the copper electroplating processMicroelectronic Engineering, 2000
- Experimental and analytical study of seed layer resistance for copper damascene electroplatingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Effects of collimator aspect ratio and deposition temperature on copper sputtered seedlayersJournal of Vacuum Science & Technology A, 1999
- Surfactant-Assisted Metallorganic CVD of (111)-Oriented Copper Films with Excellent Surface SmoothnessElectrochemical and Solid-State Letters, 1999
- Damascene copper electroplating for chip interconnectionsIBM Journal of Research and Development, 1998
- Electroless copper deposition for ULSIThin Solid Films, 1995