Auger recombination in a semiconductor under a magnetic field
- 1 October 1973
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 44 (10), 4717-4723
- https://doi.org/10.1063/1.1662024
Abstract
The Auger recombination lifetime of the excess carriers in a semiconductor under an applied magnetic field is calculated on the basis of a simple two‐band model. It is predicted that the magnitude of the lifetime shows an oscillation with the change of the magnetic field when the cyclotron energy and the band‐gap energy are of comparable order of magnitude.Keywords
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