OMVPE growth of gallium indium phosphide on the {100} gallium arsenide using adduct compounds
- 30 April 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (2), 377-384
- https://doi.org/10.1016/0022-0248(85)90094-6
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Metal organic vapour phase epitaxy of indium phosphideJournal of Crystal Growth, 1983
- Croissance épitaxique de GaAs1−xPx (0 < x < 0.6) par OM-CVD á partir du complexe CIEt2Ga·AsEt3 et de la diethyl phosphine: une source de phosphore originale HPEt2Journal of Crystal Growth, 1983
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- LPE Growth of In1-xGaxAs1-yPy with Narrow Photoluminescence Spectrum on GaAs (111)B SubstratesJapanese Journal of Applied Physics, 1982
- Orientation Dependence of LPE Growth Behavior of GaxIn1-xP on (100) and (111)B GaAs SubstratesJapanese Journal of Applied Physics, 1982
- Composition profiles and growth kinetics of GaxIn1−xP LPE layers: Experiments and theoretical approachJournal of Crystal Growth, 1981
- Vapor phase epitaxial growth of nitrogen-doped In1−xGaxP alloys 0385 V 2Journal of Crystal Growth, 1974
- Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction ElectroluminescenceJournal of the Electrochemical Society, 1973
- Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction ElectroluminescenceJournal of the Electrochemical Society, 1973
- Reactions of phosphine with trimethylindiumJournal of Inorganic and Nuclear Chemistry, 1960