High Temperature Stable [Ir3Si-TaN]/HfLaON CMOS with Large Work-Function Difference
- 1 December 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 1-4
- https://doi.org/10.1109/iedm.2006.346859
Abstract
The authors report novel 1000degC-stable [Ir3Si-TaN]/HfLaON CMOS for the first time, where the self-aligned and gate-first process are full compatible to current VLSI. Good Phim-eff of 5.08 and 4.24 eV, low Vt of -0.10 and 0.18 V, high mobility of 84 and 217 cm2/Vs at 1.6 nm EOT, and small 85degC BTI <20 mV (10 MV/cm for 1 hr) are measuredKeywords
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