Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
- 7 April 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Metallic diffusion through high-K HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phim,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phim,eff of 4.15 and 4.9 eV are also obtained in YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperatureKeywords
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