Planar In0.53Ga0.47As Avalanche Photodiodes with Guard-Ring Structure
- 1 July 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (7), 1441-1442
- https://doi.org/10.1143/jjap.19.1441
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Dark-Current of In0.53Ga0.47As/InP Mesa-Type Avalanche PhotodetectorJapanese Journal of Applied Physics, 1980
- Vapor-Phase Epitaxial Growth of InGaAs on (100) InP SubstrateJapanese Journal of Applied Physics, 1980
- Zn-diffused In0.53Ga0.47As/InP avalanche photodetectorApplied Physics Letters, 1979
- Growth of In0.53Ga0.47As on (100)-oriented InP from Supercooled SolutionJapanese Journal of Applied Physics, 1979
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979
- In0.53Ga0.47As p-i-n photodiodes for long-wavelength fibre-optic systemsElectronics Letters, 1979
- High-efficiency In1−xGaxAsyP1−y/InP photodetectors with selective wavelength response between 0.9 and 1.7 μmApplied Physics Letters, 1978
- The Ga0.47In0.53As homojunction photodiode—A new avalanche photodetector in the near infrared between 1.0 and 1.6 μmApplied Physics Letters, 1978