Piezoelectric control of doping and band structure in the crossed gap system GaSb/InAs
- 19 February 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 263 (1-3), 575-579
- https://doi.org/10.1016/0039-6028(92)90412-y
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Magnetotransport of piezoelectric [111] oriented strained quantum wellsApplied Physics Letters, 1991
- GaSb/InAs heterojunctions grown by MOVPE: Effect of gas switching sequences on interface qualityJournal of Crystal Growth, 1991
- GaSb/InAs heterojunctions grown by MOVPEJournal of Crystal Growth, 1991
- Strain-induced two-dimensional electron gas in [111] growth-axis strained-layer structuresApplied Physics Letters, 1990
- Direct demonstration of a misfit strain-generated electric field in a [111] growth axis zinc-blende heterostructureApplied Physics Letters, 1990
- Theory of semiconductor superlattice electronic structureReviews of Modern Physics, 1990
- Optical Properties of (100) - and (111)-Oriented GaInAs/GaAs Strained-Layer SuperlatticesPhysical Review Letters, 1989
- Observation of the zero-field spin splitting of the ground electron subband in gasb-inas-gasb quantum wellsPhysical Review B, 1988
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Electronic states and quantum Hall effect in GaSb-InAs-GaSb quantum wellsPhysical Review B, 1987