GaSb/InAs heterojunctions grown by MOVPE: Effect of gas switching sequences on interface quality
- 1 April 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (4), 677-682
- https://doi.org/10.1016/0022-0248(91)90623-d
Abstract
No abstract availableKeywords
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