Background deep-level defects in VPE GaP

Abstract

Residual deep‐level defects in vapor‐phase epitaxial GaP were determined by transient capacitance spectroscopy. The dominant trap in the temperature range studied occurs at E_c−0.44 eV and was present in concentrations of (0.1–1.6) ×10¹⁴ cm⁻³. Two other traps were observed at the epitaxial‐layer–substrate interface with energies of E_c−0.23 eV and E_v+0.51 eV. The capture cross section and concentration of these defects are also presented.