Positron lifetime experiments in indium selenide

Abstract

Positron lifetime experiments have been performed on as-grown samples which had been isochronally annealed up to 820 K and plastically deformed and these experiments yield a constant lifetime of 282+or-2 ps which is attributed to bulk positron states in InSe. Electron-irradiated samples exhibit a two-component spectrum, revealing the presence of positron traps which anneal out at about 330 K. The nature of the native shallow donors in InSe is discussed in the light of the results, which support the idea that native donor centres are probably interstitial In atoms rather than Se vacancies. Positron trapping observed in the electron-irradiated samples is attributed to defects related to In vacancies.