The effect of interface arsenic domains on the electrical properties of GaAs MOS structures
- 15 August 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (4), 341-342
- https://doi.org/10.1063/1.90329
Abstract
Postgrowth annealing of plasma grown GaAs oxides in N2 and H2 result in very different electrical behaviors. By examining cross‐sectioned specimens of these oxides with transmission electron microscopy, and correlating the observed structure with electrical measurements, it is demonstrated that metallic As at the oxide‐semiconductor interface plays a significant role in determining the MOS characteristics.Keywords
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