Optical and ion-scattering study of SiO2layers thermally grown on 4H-SiC
- 12 June 2002
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 17 (7), L29-L32
- https://doi.org/10.1088/0268-1242/17/7/101
Abstract
No abstract availableKeywords
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