InGaAsP-InP planar-stripe lasers fabricated by wet chemical etching
- 1 May 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (5), 3176-3178
- https://doi.org/10.1063/1.329183
Abstract
InGaAsP‐InP planar‐stripe lasers are fabricated monolithically, in which cavity mirrors are formed by wet chemical etching and planar stripes are aligned along the [100] direction. The lasers emit light at ∼1.5 μm. The lowest threshold current density of these lasers is almost the same as that of conventionally fabricated cleaved‐mirror lasers.Keywords
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