Photoluminescence of Unintentionally Doped and N-Doped 3C-SiC Grown by Chemical Vapor Deposition

Abstract

Photoluminescence of unintentionally doped and N-doped 3C-SiC epilayers grown on Si by chemical vapor deposition was studied. It was found that N-doped samples have different emission lines from the bound exciton emissions observed in unintentionally doped 3C-SiC epilayers. This result suggests that the residual carriers in unintentionally doped n-type 3C-SiC cannot be attributed to nitrogen atoms, which is consistent with the results obtained from the temperature dependence of the carrier density of 3C-SiC.