Measuring and modeling minority carrier transport in heavily doped silicon
- 28 February 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (1-2), 47-54
- https://doi.org/10.1016/0038-1101(85)90209-6
Abstract
No abstract availableThis publication has 47 references indexed in Scilit:
- Contact resistance of LPCVD W/Al and PtSi/W/Al metallizationIEEE Electron Device Letters, 1984
- Heavy Doping Effects in SiliconPublished by Elsevier ,1981
- Heavy doping effects in p-n-p bipolar transistorsIEEE Transactions on Electron Devices, 1980
- Heavily doped semiconductors and devicesAdvances in Physics, 1978
- A methodology for experimentally based determination of gap shrinkage and effective lifetimes in the emitter and base of p-n junction solar cells and other p-n junction devicesIEEE Transactions on Electron Devices, 1977
- Base current of I/sup 2/L transistorsIEEE Journal of Solid-State Circuits, 1977
- Measurements of bandgap narrowing in Si bipolar transistorsSolid-State Electronics, 1976
- The influence of heavy doping on the emitter efficiency of a bipolar transistorIEEE Transactions on Electron Devices, 1971
- Infrared Absorption in Heavily Doped n‐Type SiPhysica Status Solidi (b), 1969
- The temperature dependence of ideal gain in double diffused silicon transistorsIEEE Transactions on Electron Devices, 1968