Cyclotron resonance of two-dimensional holes in strained-layer quantum well structure of (100)In0.20Ga0.80As/GaAs
Open Access
- 14 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (7), 666-668
- https://doi.org/10.1063/1.101816
Abstract
Cyclotron resonance of the two‐dimensional hole gas (2DHG) in the strained‐layer quantum well structure of In0.20Ga0.80As/GaAs is observed in far‐infrared transmission measurements made at 4.2 K. The cyclotron mass of the 2DHG in the In0.20Ga0.80As channel is (0.191±0.008)me for a 2D hole density p2D =8.5×1011/cm2.Keywords
This publication has 14 references indexed in Scilit:
- Determination of energy-band dispersion curves in strained-layer structuresApplied Physics Letters, 1989
- Breaking of the Usual Selection Rule for Magnetoluminescence in Doped Semiconductor Quantum WellsPhysical Review Letters, 1988
- Critical Stresses forStrained-Layer PlasticityPhysical Review Letters, 1987
- Large valence-band nonparabolicity and tailorable hole masses in strained-layer superlatticesApplied Physics Letters, 1986
- Influence of built-in strain on Hall effect in InGaAs/GaAs quantum well structures with p-type modulation dopingApplied Physics Letters, 1986
- p-channel, strained quantum well, field-effect transistorApplied Physics Letters, 1986
- Electrical transport of holes in GaAs/InGaAs/GaAs single strained quantum wellsApplied Physics Letters, 1986
- Icosahedral quasicrystal produced by gas evaporation of an Al-Mn alloyApplied Physics Letters, 1986
- Electron and hole effective masses for two-dimensional transport in strained-layer superlatticesSuperlattices and Microstructures, 1985
- Light-hole conduction in InGaAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985