Phonon populations by nanosecond-pulsed Raman scattering in Si

Abstract

Since the first time-resolved Raman studies of phonon populations under pulsed-laser-annealing conditions, a number of cw Raman studies have been performed which provide a much improved basis for interpreting the pulsed Raman data. Here we present new pulsed Raman results and interpret them with reference to temperature-dependent resonance effects, high-carrier-density effects, phonon anharmonicity, and laser-induced strain effects. The pulsed Raman data—Stokes to anti-Stokes ratios, shift and shape of the first-order peak, and second-order spectra—indicate the existence of a phase in which the Raman signal disappears followed by a rapidly cooling solid which begins within 300 K of the 1685 K normal melting temperature of Si. We identify a major difficulty in pulsed Raman studies in Si to be the decrease in Raman intensity at high temperatures.