Exciton localization inAs-GaAs coupled quantum-well structures
- 15 January 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (2), 1095-1099
- https://doi.org/10.1103/physrevb.41.1095
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Exciton photoluminescence linewidths in very narrow AlGaAs/GaAs and GaAs/InGaAs quantum wellsJournal of Applied Physics, 1988
- Correlation between the light- and heavy-hole free-exciton fine structure inAlxGa1−xAs-GaAs multiple-quantum-well structures using photoluminescence excitation spectroscopyPhysical Review B, 1988
- Pseudomorphic GaAs/InGaAs single quantum wells by atmospheric pressure organometallic chemical vapor depositionApplied Physics Letters, 1988
- Measurement of 'material' parameters in multi-quantum-well structuresSemiconductor Science and Technology, 1987
- Photoluminescence studies of the effects of interruption during the growth of single GaAs/Al0.37Ga0.63As quantum wellsApplied Physics Letters, 1986
- Photoluminescence study of interface defects in high-quality GaAs-GaAlAs superlatticesJournal of Applied Physics, 1986
- One Atomic Layer Heterointerface Fluctuations in GaAs-AlAs Quantum Well Structures and Their Suppression by Insertion of Smoothing Period in Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Electronic state localization in semiconductor superlatticesApplied Physics Letters, 1984
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981