Electroabsorptive modulators in InGaAs/AlGaAs
- 19 August 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (8), 888-890
- https://doi.org/10.1063/1.105266
Abstract
Theoretical and experimental work shows that electroabsorption improves and the quantum-confined Stark effect becomes stronger in In0.2Ga0.8As/AlxGa1−xAs quantum wells as the aluminum concentration (x) is increased in the barriers. This improved electroabsorption was used in a reflection modulator that exhibited the largest reported reflectivity change of 77%.Keywords
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