The influence of substrate orientation and mis-orientation on the Si-doping of GaAs grown by MOVPE
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1-4), 263-267
- https://doi.org/10.1016/0022-0248(91)90468-k
Abstract
No abstract availableKeywords
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