Si-doping of MOCVD GaAs: Closer analysis of the incorporation process
- 31 December 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (4), 827-837
- https://doi.org/10.1016/0022-0248(89)90323-0
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1989
- Silicon doping using disilane in low-pressure OMVPE of GaAsJournal of Crystal Growth, 1987
- Gas phase depletion and flow dynamics in horizontal MOCVD reactorsJournal of Crystal Growth, 1986
- A Study of Silicon Incorporation in GaAs MOCVD LayersJournal of the Electrochemical Society, 1985
- Measurement and reduction of water vapor content in AsH3 and PH3 source gases used in epitaxyJournal of Vacuum Science & Technology B, 1985
- Si-doped GaAs epitaxial layers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1984
- MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistorJournal of Crystal Growth, 1984
- Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor depositionJournal of Crystal Growth, 1984
- Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPEJournal of Crystal Growth, 1982
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979