Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel charge-coupled device parameters
- 1 May 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (5), 753-761
- https://doi.org/10.1016/0038-1101(78)90008-4
Abstract
No abstract availableKeywords
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