Improvements in AlGaAs laser diodes grown by molecular beam epitaxy using a compositionally graded buffer layer
- 28 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (4), 191-193
- https://doi.org/10.1063/1.97166
Abstract
The effect of a compositionally graded buffer layer (CGBL) in AlGaAs laser diodes grown by molecular beam epitaxy is presented. The threshold current and the differential quantum efficiency are improved by a factor of ∼2. The lifetime is markedly improved by using a CGBL and it is comparable to that of lasers grown by liquid phase epitaxy.Keywords
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