Abrupt OMVPE grown GaAs/GaAlAs heterojunctions
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 383-388
- https://doi.org/10.1016/0022-0248(84)90439-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Monolayer heterointerfaces and thin layers (∼10 Å) in AlxGa1−xAs-GaAs superlattices grown by metalorganic chemical vapour depositionElectronics Letters, 1984
- The dynamics of electron-hole collection in quantum well heterostructuresJournal of Applied Physics, 1982
- Low-threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM VPEElectronics Letters, 1982
- Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopantElectronics Letters, 1982
- Absorption, stimulated emission, and clustering in AlAs-AlxGa1−xAs-GaAs superlatticesJournal of Applied Physics, 1981
- Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxyApplied Physics Letters, 1981
- A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beamApplied Physics Letters, 1981
- Optical characterization of interface disorder in multi-quantum well structuresSolid State Communications, 1981
- Quantum-well heterostructure lasersIEEE Journal of Quantum Electronics, 1980
- Concentration dependence of the refractive index for n - and p -type GaAs between 1.2 and 1.8 eVJournal of Applied Physics, 1974