Mass spectrometry detection of radicals in SiH4-CH4-H2glow discharge plasmas
- 1 May 1995
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 4 (2), 250-259
- https://doi.org/10.1088/0963-0252/4/2/009
Abstract
After reviewing the various in situ and non-intrusive diagnostics of radicals in low-pressure discharges, we present the technique of threshold ionization mass spectrometry. This technique has been applied to measure SiHn, CHn (n3 and CH3 densities near the wall reveals large differences in surface reaction probabilities. Then, the contribution of SiHn and CHn (n<or=3) flux to a-Si:H and a-C:H deposition is investigated and compared with the growth rate. Finally, for the first time, we report a measurement of H atom density by mass spectrometry in a hydrogen discharge.Keywords
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