Interdiffusion in InGaAs/GaAs quantum well structures as a function of depth

Abstract

Interdiffusion in InGaAs/GaAs quantum wells has been studied using photoluminescence to follow the development of the diffusion with time in a single sample. Two distinct regimes are seen; a fast initial diffusion and a second steady‐state diffusion. The steady‐state diffusion was found to be dependent on the depth of the quantum well from the surface and to correlate with published data on the indiffusion of gallium vacancies into gallium arsenide.