Plasma-Enhanced Deposition of Silicon Nitride from SiH4–N2 Mixture
- 1 May 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (5A), L321
- https://doi.org/10.1143/jjap.22.l321
Abstract
Excellent silicon nitride films which can be used as the gate insulator of an a-Si FET are fabricated by RF glow-discharge of SiH4–N2–H2 gas mixtures. Resistivity of larger than 1×1016 Ω·cm and breakdown strength of 6×106 V/cm are realized. The optimum deposition conditions are evaluated and briefly discussed in connection with mechanisms of the plasma-enhanced deposition.Keywords
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