Near Room Temperature CW Operation of 660 nm Visible AlGaAs Multi-Quantum-Well Laser Diodes Grown by Molecular Beam Epitaxy

Abstract

CW operation of 0°C at a wavelength of 660 nm was achieved by AlGaAs multi-qunatum-well laser diodes which were fabricated from a wafer grown by molecular beam epitaxy. With a 10 µm-wide stripe geometry laser structure, the threshold current density was as low as 5.5 kA/cm² (pulse) and 8 kA/cm² (cw). The shortest wavelength for pulse operation was 645 nm at 20°C.